Freescale Semiconductor’s two new LDMOS RF power transistors allow wireless base station amplifiers to cover all channels in an entire allocated frequency band. The transistors are internally matched with low capacitance to simplify circuit design and have integrated electrostatic discharge protection. Their broad gate-source voltage range of -6 to +10V increases their performance when operated in Class C mode. The transistors are housed in Freescale’s NI-780-4 and NI-780S-4 air cavity packages.Learn more from Freescale Semiconductor.
Transistors Cover Full Frequency Bands for Wireless Base Stations
