The International Silicon-on-Insulator (SOI) Conference of the Institute of Electrical and Electronics Engineers (IEEE), held this year in San Diego, has awarded both its annual “Best Paper Award” and its “Best Student Paper Award” to the same recipient: Shuqing (Victor) Cao of Stanford University. “Field Effect Resistor, a Single-Device-At-Pad Solution for ESD Protection in Deeply Scaled SOI Technology,” the paper co-authored by Cao, his PhD thesis advisor Prof. Robert Dutton, and industry collaborators, describes a new device that effectively protects circuits from electrostatic discharge (ESD), a key factor in one-third of all integrated circuit (IC) failures.Visit Stanford Electrical Engineering.
Electrostatic Discharge Protection Design Wins IEEE Awards
