MILMEGA to Make Presentation in Beijing

MILMEGA Managing Director Pat Moore will be presenting at the 13th International Exhibition on Electromagnetic Compatibility in Beijing, China, 10 – 12 June 2008. The topic of the presentation is ” The advantages of wide band gap transistors for muliti octave amplifier design.” In this presentation Pat Moore will present an overview of the advantages that the use of a new generation of transistor technologies, Silicon Carbide (SiC) and Gallium Nitride (GaN), bring to Milmega’s 200-MHz to 1-GHz 1200-W product and 2- to 6-GHz, 50-W product developments, respectively.