Cree Inc., has just announced its new family of 50V GaN HEMT Die which includes the 40W CGHV60040D, 50V, and the 170W CGHV60170D. These products can operate up to 6GHz and are unique amongst the market for bare GaN HEMPT die. The dies yield a 65 percent increase in power efficiency and a 17dB small signal gain.
“Cree’s new 0.4um, 50V GaN HEMT die offer hybrid amplifier designers higher gain and efficiency while operating over a broad, instantaneous frequency bandwidth, providing a unique to alternative to silicon (Si) and gallium arsenide (GaAs) technologies,” according to the company.
