A new family of p-channel power MOSFETs from Vishay Intertechnology includes several devices rated from 8 V to 30 V that are industry-firsts for their voltage ratings in their package type. Among the devices being released are the industry’s first -12-V (SiB419DK), and -30-V (SiB415DK) single p-channel power MOSFETs in the PowerPAK SC-75 package. The previously announced SiB417DK is the first such -8-V device and is joined today by an ESD-protected version with the same -8-V rating, the SiB417EDK. Both of these 8-V devices include on-resistance specifications down to VGS=1.2V, potentially allowing designers to reduce space requirements, power consumption, and solution cost by eliminating the need for level-shift circuitry. The new products also include two -20-V devices, the single SiB411DK and dual SiB911DK. On-resistance for the single devices at a 4.5-V gate drive ranges from 0.052 ohms to 0.066 ohms.The Vishay Siliconix PowerPAK SC-75 power MOSFETs measure 1.6mm by 1.6mm by 0.75mm — the same area dimensions as the standard SC-75 — but offer much lower on-resistance thanks to a construction that accommodates a larger die within the same footprint. In addition to helping the environment by saving energy, the PowerPAK SC-75 is 100% lead (Pb)-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances. The new PowerPAK SC-75 devices offer a new miniaturized package option to designers who are looking for ways to save space and to reduce power consumption in portable electronic systems that are continually increasing in functionality. To meet consumer expectations for battery run times between charges, designers require smaller MOSFET packages with low power consumption, and this is just what the new PowerPAK SC-75 devices provide.