Five new broadband power amplifiers from Teseq operate from 0.8 GHz to 3.1 GHz and from 2 GHz to 6 GHz with power levels ranging from 30 W to 450 W. Three Class A models are based on gallium arsenide (GaAs) integrated circuit (IC) technology and offer significantly better compression characteristics and increased efficiencies than earlier silicon-based low power amplifiers. The GaAs-based design provides low distortion linear performance across the 0.8- to 3.1-GHz operating range and ensures that the devices operate at full power without interruption, even when there is a short or open circuit. Two additional models based on gallium nitride (GaN) IC technology deliver consistent power into the poor and variable match typically found in the 2- to 6-GHz range. The GaN balanced-pair design provides a high breakdown voltage and easily handles the high levels of reflected power caused by the presence of the EUT.The frequency ranges and power levels of the new amplifiers have been matched to the application requirements of for extending IEC/EN 61000-4-3 radiated immunity testing to 6.0 GHz and for automotive immunity tests to 3.1 GHz. A safety interlock connector activated by a short circuit to ground will put the amplifiers in standby mode. Indicators on the front panel display over-temperature and RF interlock conditions. Harmonics are better than -20 dBC and stability is unconditional eliminating the chance of oscillation.Find out more online.
Expanded Amplifier Line Delivers Reliable Performance in Demanding Environments
