The International Silicon-on-Insulator (SOI) Conference of the Institute of Electrical and Electronics Engineers (IEEE), held this year in San Diego, has awarded both its annual “Best Paper Award” and its “Best Student Paper Award” to the same recipient: Shuqing (Victor) Cao of Stanford University. “Field Effect Resistor, a Single-Device-At-Pad Solution for ESD Protection in Deeply Scaled SOI Technology,” the paper co-authored by Cao, his PhD thesis advisor Prof. Robert Dutton, and industry collaborators, describes a new device that effectively protects circuits from electrostatic discharge (ESD), a key factor in one-third of all integrated circuit (IC) failures.Visit Stanford Electrical Engineering.
About the Author
Interference Technology
Established in 1970, Interference Technology helps EMI/EMC engineers find solutions to their various testing, design, application and regulatory issues by publishing articles, news and other practical content. We help suppliers in these areas to find the right customers for their components, materials, test equipment and services through a wide range of marketing services, including lead generation, branding, market research and events. The publication is available in various printed and electronic media formats, with readers in over 60 countries. We also publish issues in local languages in China, Japan and Europe.