Vishay Intertechnology, Inc., a manufacturer of discrete semiconductors and passive electronic components, has released new 8V and 20V n-channel and p-channel TrenchFET® power MOSFETs. The new devices are ideal for battery or load switching power management applications for portable electronics, said the company.
According to the company, the 8 V n-channel Si8424CDB and 20 V p-channel Si8425DB offer a maximum on-resistance of 20 mΩ and 23 mΩ, respectively, at a 4.5 V gate drive for applications where low on-resistance is more critical than space. In contrast, the smaller 8V n-channel Si8466EDB will be used for applications where space is more critical than on-resistance. The Si8466EDB also provides ESD protection.
All devices are compliant with RoHS Directive 2011/65/EU and are halogen-free, according to the JEDEC JS709A definition.
