NXP Semiconductors has announced the expansion of its Gen8 LDMOS RF power transistor portfolio for wireless base stations, featuring linearized efficiency, gain and wideband capability.
Covering all main cellular frequency bands between 700 to 2700MHz, the latest version of the LDMOS process increases the efficiency of Doherty amplifiers by as much as three points and improves gain by as much as 1dB. The Gen8 LDMOS RF power transistors offer up to 115MHz of signal bandwidth to enable full-band operation for all cellular frequency bands, including GSM, W-CDMA and LTE, as well as video bandwidth up to 300MHz. Designed for cost-sensitive applications, the new Gen8 LDMOS transistors offer P1dB
