API Technologies, a provider of high performance RF/microwave, power and security solutions for critical applications, has released a new line of gallium nitride (GaN) drivers to provide a complete, front-to-back amplifier solution for applications requiring high levels of gain and output power.
The new GaN power amplifier drivers are ideal for use in applications including radar, communication transmitters, jamming systems, optical drivers, and medical imaging electronics. Their broadband capabilities and rugged architecture make them ideal for use in harsh environmental or weather conditions, such as communications systems in developing countries or field-deployed military equipment.
The drivers are manufactured in the United States and utilize in-house thin and thick film technologies, as well as Surface Mount Technology (SMT). Leveraging a mixed SMT and chip-and-wire process in the manufacture of these products ensures exceptional reliability and stability in a highly compact, hermetically sealed package.
“With the ability to operate without damage over a wide range of input and output VSWR conditions, these power amp drivers are ideal for a variety of high powered amplifier applications including both API-designed and customer-designed power amplifier products,” Dennis Barrick, technical marketing manager of RF/microwave and microelectronics (RF2M-US) at API Technologies, said.
