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GaN RF Product for Cellular Infrastructure Applications

July 10, 2012 Interference Technology Amplifiers, Telecom

Freescale Semiconductor revealed its first RF power amplifier product built using gallium nitride technology. The company’s RF power GaN products will initially target the cellular infrastructure market, with potential future applications including avionics, radar, ISM and software-defined radio. The AFG25HW355S device a 350W HiP with smaller product form factors, low parasitic loss, elevated power density and higher-frequency operation. Potential GaN cellular applications include quasi-linear, Doherty, high-powered pulsed (non-linear) applications, broadband PAs and switch-mode amplifier configurations.

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Interference Technology

Established in 1970, Interference Technology helps EMI/EMC engineers find solutions to their various testing, design, application and regulatory issues by publishing articles, news and other practical content. We help suppliers in these areas to find the right customers for their components, materials, test equipment and services through a wide range of marketing services, including lead generation, branding, market research and events. The publication is available in various printed and electronic media formats, with readers in over 60 countries. We also publish issues in local languages in China, Japan and Europe.