Freescale Semiconductor revealed its first RF power amplifier product built using gallium nitride technology. The company’s RF power GaN products will initially target the cellular infrastructure market, with potential future applications including avionics, radar, ISM and software-defined radio. The AFG25HW355S device a 350W HiP with smaller product form factors, low parasitic loss, elevated power density and higher-frequency operation. Potential GaN cellular applications include quasi-linear, Doherty, high-powered pulsed (non-linear) applications, broadband PAs and switch-mode amplifier configurations.
GaN RF Product for Cellular Infrastructure Applications
Item Media Amplifiers, Telecom
