Sanix Incorporated has chosen Cree, a company that specializes in producing semiconductor products, to assist in the development of solar energy infrastructures in Japan.
Cree’s “C2M™, 1200V, 80mOhm SiC MOSFETs have been selected by Sanix, to be designed into their new 9.9kW three-phase solar inverters for use in the construction of commercial photovoltaic systems in the fast-growing Japanese solar energy market.”
Cree is currently “delivering production volumes of SiC MOSFETs to Sanix and other PV inverter manufacturers, as well as to makers of industrial power supplies, auxiliary power converters, battery chargers, and motor drives.
“Through this partnership with Cree and their SiC technology, Sanix is able to capture more market share in the competitive Japan solar market. Cree’s silicon carbide MOSFETs were critical for Sanix to meet our efficiency and thermal design targets. SiC switches reduced losses in our inverter electronics by more than 30 percent versus the silicon super-junction MOSFETs we were considering. In addition to providing a large efficiency gain, Cree’s latest generation C2M SiC MOSFETs were priced competitively, making it possible to replace lower voltage, less rugged, and less efficient silicon MOSFETs,” Hiroshi Soga, general manager at Sanix Incorporated, said.
“Cree is extremely pleased that Sanix has chosen to specify our C2M, 1200V SiC MOSFET technology in its new 9.9kW solar inverters. Cree® SiC power devices can provide significant advantages with regard to PV inverter efficiency, reliability, and cost, and will provide Sanix with a critical competitive advantage as they continue to expand their share of the Japanese solar market,” Cengiz Balkas, general manager and vice president at Cree Power, said.
