Freescale Semiconductor, a manufacturer of embedded processing solutions, has released the MML09231H, a pHEMT low noise amplifier (LNA) based on GaAs process technology designed to enhance receiver performance for wireless systems that operate between 700 and 1400 MHz.
According to the company, the new amplifier “can tolerate a maximum input signal of +20 dBm, has an RF output peak power of +24.5 dBm (280 mW), high reverse isolation of -21 dB, small-signal gain of 17.2 dB (externally adjustable), and current consumption of only 55 mA from a single 5 Vdc supply.”
Ideal applications include “small cell and macrocell transceivers, as well as a range of applications requiring extremely low noise figures, high linearity, and high RF output power.”
For more information visit Freescale Semiconductor
