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100V Half-Bridge Gate Driver for Enhancement-Mode Gallium-Nitride Power FETs

Products, Test Instrumentation

National Semiconductor Corp.’s new 100V half-bridge gate driver is optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters.  National’s new LM5113 is a highly-integrated, high-side and low-side GaN FET driver that reduces component count by 75 percent and shrinks printed circuit board (PCB) area by up to 85 percent compared to discrete driver designs.Learn more from National Semiconductor.

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Interference Technology

Established in 1970, Interference Technology helps EMI/EMC engineers find solutions to their various testing, design, application and regulatory issues by publishing articles, news and other practical content. We help suppliers in these areas to find the right customers for their components, materials, test equipment and services through a wide range of marketing services, including lead generation, branding, market research and events. The publication is available in various printed and electronic media formats, with readers in over 60 countries. We also publish issues in local languages in China, Japan and Europe.

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